CM4209 pnp silicon transistor description: the central semiconductor CM4209 is a pnp saturated switching silicon transistor designed for high speed switching applications. marking: full part number to-18 case maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 15 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 4.5 v continuous collector current i c 200 ma power dissipation p d 500 mw power dissipation (t c =25c) p d 1.2 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance ja 350 c/w thermal resistance jc 146 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i ces v ce =8.0v 10 na i ces v ce =8.0v, t a =125c 5.0 a bv cbo i c =100a 15 v bv ces i c =100a 15 v bv ceo i c =3.0ma 15 v bv ebo i e =100a 4.5 v v ce(sat) i c =1.0ma, i b =100a 0.15 v v ce(sat) i c =10ma, i b =1.0ma 0.18 v v ce(sat) i c =50ma, i b =5.0ma 0.60 v v be(sat) i c =1.0ma, i b =100a 0.80 v v be(sat) i c =10ma, i b =1.0ma 0.69 0.86 v v be(sat) i c =50ma, i b =5.0ma 1.5 v h fe v ce =0.5v, i c =1.0ma 35 h fe v ce =0.3v, i c =10ma 50 120 h fe v ce =0.3v, i c =10ma, t a =-55c 20 h fe v ce =1.0v, i c =50ma 40 r0 (10-june 2011) www.centralsemi.com
CM4209 pnp silicon transistor lead code: 1) emitter 2) base 3) collector marking: full part number to-18 case - mechanical outline electrical characteristics - continued: (t a =25c unless otherwise noted) symbol test conditions min max units f t v ce =10v, i c =10ma, f=100mhz 850 mhz c ob v cb =5.0v, i e =0 7.0 pf c ib v be =0.5v, i c =0 7.0 pf t on v cc =1.5v, i c =10ma, i b1 =1.0ma 20 ns t off v cc =1.5v, i c =10ma, i b1 =i b2 =1.0ma 20 ns www.centralsemi.com r0 (10-june 2011)
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